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SMG2370N N-Channel MosFET

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Description

Elektronische Bauelemente SMG2370N 1.8 A, 100 V, RDS(ON) 280 m N-Channel Enhancement Mode Mos.FET RoHS Compliant Product A suffix of ā€œ-Cā€ specifies.
These miniature surface mount MOSFETs utilize a High Cell Density trench process to provide Low RDS(on) and to ensure minimal power loss and heat diss.

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Datasheet Specifications

Part number
SMG2370N
Manufacturer
SeCoS
File Size
138.42 KB
Datasheet
SMG2370N-SeCoS.pdf
Description
N-Channel MosFET

Features

* Low RDS(on) provides higher efficiency and extends battery life.
* Low thermal impedance copper leadframe SC-59 saves board Space.
* Fast switching speed.
* High performance trench technology. PACKAGE INFORMATION Package MPQ SC-59 3K LeaderSize 7’ inch SC-59 A L 3 Top View

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