SSD02N60J-C Datasheet - SeCoS

SSD02N60J-C N-Ch Enhancement Mode Power MOSFET

The high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offers .

SSD02N60J-C Features

* Robust high voltage termination

* Avalanche energy specified

* Source-to-drain diode recovery time comparable to a discrete fast recovery diode

* Diode is characterized for the use in bridge circuits

* IDSS and VDS are specified at the elevated temperature PACKAGE INFORMATION

SSD02N60J-C-SeCoS.pdf