SSD02N60J-C Datasheet (SeCoS) - N-Ch Enhancement Mode Power MOSFET

SSD02N60J-C, N-Ch Enhancement Mode Power MOSFET

The high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time.

In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes.

The new energy efficient design also offers

SSD02N60J-C Features

* Robust high voltage termination

* Avalanche energy specified

* Source-to-drain diode recovery time comparable to a discrete fast recovery diode

* Diode is characterized for the use in bridge circuits

* IDSS and VDS are specified at the elevated temperature PACKAGE INFORMATION