SSD02N60J-C - N-Ch Enhancement Mode Power MOSFET

SeCoS

Datasheet Details

Part number	SSD02N60J-C
Manufacturer	SeCoS
File Size	547.65 KB
Description	N-Ch Enhancement Mode Power MOSFET
Datasheet	SSD02N60J-C-SeCoS.pdf

The high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time.

Robust high voltage termination.
Avalanche energy specified.
Source-to-drain diode recovery time comparable to a discrete fast recovery diode.
Diode is characterized for the use in bridge circuits.
IDSS and VDS are specified at the elevated temperature.

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Published: May 27, 2024 |