SSD02N60J-C N-Ch Enhancement Mode Power MOSFET

SeCoS

Description

Elektronische Bauelemente SSD02N60J-C 2A, 600V, RDS(ON) 4.4Ω N-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies ha.
The high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time.

📥 Download Datasheet

SSD02N60J-C Datasheet Preview — Preview of SSD02N60J-C PDF

Datasheet Specifications

Part number: SSD02N60J-C
Manufacturer: SeCoS
File Size: 547.65 KB
Datasheet: SSD02N60J-C-SeCoS.pdf
Description: N-Ch Enhancement Mode Power MOSFET

Features

* Robust high voltage termination
* Avalanche energy specified
* Source-to-drain diode recovery time comparable to a discrete fast recovery diode
* Diode is characterized for the use in bridge circuits
* IDSS and VDS are specified at the elevated temperature PACKAGE INFORMATION

SSD02N60J-C Distributors

📁 Related Datasheet

SSD0817 SSD0859 SSD-C01G-3xx SSD-C01G-5xx SSD-C01G-6xx SSD-C02G-3xx

📌 All Tags

SSD02N60J-C N-Ch Enhancement Mode Power MOSFET SeCoS

SeCoS SSD02N60J-C-like datasheet