SSD02N60J-C Datasheet - SeCoS

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SSD02N60J-C N-Ch Enhancement Mode Power MOSFET

Elektronische Bauelemente SSD02N60J-C 2A, 600V, RDS(ON) 4.4Ω N-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies ha.
The high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time.

SSD02N60J-C-SeCoS.pdf

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Datasheet Details

Part number:

SSD02N60J-C

Manufacturer:

SeCoS

File Size:

547.65 KB

Description:

N-Ch Enhancement Mode Power MOSFET

Features

* Robust high voltage termination
* Avalanche energy specified
* Source-to-drain diode recovery time comparable to a discrete fast recovery diode
* Diode is characterized for the use in bridge circuits
* IDSS and VDS are specified at the elevated temperature PACKAGE INFORMATION

SSD02N60J-C Distributors

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SSD02N60J-C N-Ch Enhancement Mode Power MOSFET SeCoS

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