SSD02N60SL N-Channel MOSFET

SeCoS

Description

Elektronische Bauelemente SSD02N60SL 2A , 600V , RDS(ON) 4.2Ω N-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies h.
The SSD02N60SL is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDS(on) and gate charge for mos.

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Datasheet Specifications

Part number: SSD02N60SL
Manufacturer: SeCoS
File Size: 559.33 KB
Datasheet: SSD02N60SL-SeCoS.pdf
Description: N-Channel MOSFET

Features

* Advanced high cell density Trench technology Super Low Gate Charge Excellent CdV/dt effect decline 100% EAS Guaranteed Green Device Available 1 Gate 2 Drain 3 Source A BC D GE K HF MJ N O P REF. Millimeter Min. Max. REF. Millimeter Min. Max. A 6.35 6.90 J 2.30 REF. B 4.95 5.50 K 0.64 1.

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SSD02N60SL N-Channel MOSFET SeCoS

SeCoS SSD02N60SL-like datasheet