SSD02N60SL Datasheet, Mosfet, SeCoS

SSD02N60SL Features

• Mosfet Advanced high cell density Trench technology Super Low Gate Charge Excellent CdV/dt effect decline 100% EAS Guaranteed Green Device Available 1 Gate 2 Drain 3 Source A BC D GE K H

PDF File Details

Part number:

SSD02N60SL

Manufacturer:

SeCoS

File Size:

559.33kb

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📄 Datasheet

Description:

N-channel mosfet. The SSD02N60SL is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDS(on) and ga

SSD02N60SL Application

• Applications . TO-252 FEATURES Advanced high cell density Trench technology Super Low Gate Charge Excellent CdV/dt effect decline 100% EAS Guarant

TAGS

SSD02N60SL

SeCoS

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