* Advanced high cell density Trench technology Super Low Gate Charge Excellent CdV/dt effect decline 100% EAS Guaranteed Green Device Available 1 Gate 2 Drain 3 Source A BC D GE K HF MJ N O P REF. Millimeter Min. Max. REF. Millimeter Min. Max. A 6.35 6.90 J 2.30 REF. B 4.95 5.50 K 0.64 1.
SSD02N60SL Datasheet (559.33 KB)
SSD02N60SL
SeCoS
559.33 KB
N-channel mosfet.
Elektronische Bauelemente
SSD02N60SL
2A , 600V , RDS(ON) 4.2Ω N-Ch Enhancement Mode Power MOSFET
RoHS Compliant Product A suffix of “-C” specifies h.
📁 Related Datasheet
SSD02N60J-C N-Ch Enhancement Mode Power MOSFET (SeCoS)
SSD01L60 N-Channel Enhancement Mode Power MosFET (SeCoS)
SSD04N60J N-Channel MOSFET (SeCoS)
SSD06N70SL N-Channel MOSFET (SeCoS)
SSD0817 LCD Segment / Common Driver (ETC)
SSD0859 128 x 80 STN LCD Segment / Common 4 G/S Drive (Solomon Systech)
SSD09N65H-C N-Channel Super Junction Power MOSFET (SeCoS)
SSD-C01G-3xx CF RoHS (SiliconSystems)
SSD-C01G-5xx CF RoHS (SiliconSystems)
SSD-C01G-6xx CF RoHS (SiliconSystems)
