SSD04N60J Datasheet - SeCoS

SSD04N60J N-Channel MOSFET

This advanced high voltage MOSFET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode with a fast recovery time. Designed for high voltage, high speed switching applications such as power suppliers, conver.

SSD04N60J Features

* High Current Rating Lower RDS(ON) Lower Capacitance Lower Total Gate Charge Tighter VSD Specifications Avalanche Energy Specified PACKAGE INFORMATION Package MPQ TO-252 2.5K Leader Size 13 inch ORDER INFORMATION Part Number Type SSD04N60J Lead (Pb)-free SSD04N60J-C Lead (Pb)-free and Ha

SSD04N60J-SeCoS.pdf