SSD65N10S-C N-Ch Enhancement Mode Power MOSFET

SeCoS

Description

Elektronische Bauelemente SSD65 10S-C 65A , 100V , RDS(O ) 9.8mΩ -Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies.
SSD65N10S-C is the highest performance trench N-ch MOSFETs with extreme high cell density, which provides excellent RDS(ON) and gate charge for most o.

📥 Download Datasheet

SSD65N10S-C Datasheet Preview — Preview of SSD65N10S-C PDF

Datasheet Specifications

Part number: SSD65N10S-C
Manufacturer: SeCoS
File Size: 731.38 KB
Datasheet: SSD65N10S-C-SeCoS.pdf
Description: N-Ch Enhancement Mode Power MOSFET

Features

* Advanced high cell density Trench technology Super Low Gate Charge Green Device Available MARKING 65N10S Date Code PACKAGE INFORMATION Package MPQ TO-252 2.5K Leader Size 13 inch ORDER INFORMATION Part Number Type SSD65N10S-C Lead (Pb)-free and Halogen-free ABSOLUTE MAXIMUM RATINGS (TA

SSD65N10S-C Distributors

📁 Related Datasheet

SSD-C01G-3xx SSD-C01G-5xx SSD-C01G-6xx SSD-C02G-3xx SSD-C02G-5xx SSD-C02G-6xx

📌 All Tags

SSD65N10S-C N-Ch Enhancement Mode Power MOSFET SeCoS

SeCoS SSD65N10S-C-like datasheet