SSE166N10SV-C N-Channel Shielded Gate Trench Power MOSFET

SeCoS

Description

Elektronische Bauelemente SSE166N10SV-C 166A, 100V, RDS(ON) 4.5mΩ N-Channel Shielded Gate Trench Power MOSFET RoHS Compliant Product A suffix of “-C.
The SSE166N10SV-C is the Shielded Gate Technology N-ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for mos.

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Datasheet Specifications

Part number: SSE166N10SV-C
Manufacturer: SeCoS
File Size: 500.08 KB
Datasheet: SSE166N10SV-C-SeCoS.pdf
Description: N-Channel Shielded Gate Trench Power MOSFET

Features

* Shielded Gate Trench Technology High Speed Power Switching Super Low Gate Charge Green Device Available MARKING 166N10SV =Date Code ORDER INFORMATION 1 Gate Part Number Type SSE166N10SV-C Lead (Pb)-free and Halogen-free 2 Drain 3 Source REF. A B C D E F G Millimeter Min. Max. 9.70 10.60

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SSE166N10SV-C N-Channel Shielded Gate Trench Power MOSFET SeCoS

SeCoS SSE166N10SV-C-like datasheet