SSG4801 Datasheet (SeCoS) - Dual-P Enhancement Mode Power MOSFET

SSG4801, Dual-P Enhancement Mode Power MOSFET

The SSG4801 uses advanced trench technology to provide excellent on-resistance, low gate charge and operation with gate voltages as low as 2.5V.

The device is suitable for use as a load switch or in PWM applications.

It may be used in a common drain arrangement to from a bidirectional blocking switc

SSG4801 Features

* A C N J K Simple Drive Requirement Lower On-resistance Low Gate Charge H G F E MARKING REF. 4801SS    = Date Code A B C D E F G Millimeter Min. Max. 5.80 6.20 4.80 5.00 3.80 4.00 0° 8° 0.40 0.90 0.19 0.25 1.27 TYP. REF. H J K L M N Millimeter Min. Max. 0.35 0.