SSG4801 Dual-P Enhancement Mode Power MOSFET

SeCoS

Description

SSG4801 Elektronische Bauelemente -5 A, -30 V, RDS(ON) 50 m Dual-P Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies h.
The SSG4801 uses advanced trench technology to provide excellent on-resistance, low gate charge and operation with gate voltages as low as 2.

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Datasheet Specifications

Part number: SSG4801
Manufacturer: SeCoS
File Size: 1.00 MB
Datasheet: SSG4801_SeCoS.pdf
Description: Dual-P Enhancement Mode Power MOSFET

Features

* A C N J K Simple Drive Requirement Lower On-resistance Low Gate Charge H G F E MARKING REF. 4801SS    = Date Code A B C D E F G Millimeter Min. Max. 5.80 6.20 4.80 5.00 3.80 4.00 0° 8° 0.40 0.90 0.19 0.25 1.27 TYP. REF. H J K L M N Millimeter Min. Max. 0.35 0.

SSG4801 Distributors

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SSG4801 Dual-P Enhancement Mode Power MOSFET SeCoS

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