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SSG4841P P-Ch Enhancement Mode Power MOSFET

SSG4841P Description

SSG4841P Elektronische Bauelemente -9.0 A, -40 V, RDS(ON) 35 mļ—ļ€  P-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of ā€œ-Cā€ specifies.
These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat diss.

SSG4841P Features

* A C N J K
* Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe SOIC-8 saves board space. Fast switching speed. High performance trench technology. H G F E REF. A B C D E F G PACKAGE INFORMATION Package SOP-8 MPQ 2.

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Datasheet Details

Part number
SSG4841P
Manufacturer
SeCoS
File Size
170.88 KB
Datasheet
SSG4841P_SeCoS.pdf
Description
P-Ch Enhancement Mode Power MOSFET

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P-Ch Enhancement Mode Power MOSFET SeCoS
SeCoS SSG4841P-like datasheet