SSG4842N N-Ch Enhancement Mode Power MOSFET

SeCoS

Description

SSG4842N Elektronische Bauelemente 23A , 40V , RDS(ON) 9 mΩ N-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halo.
These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat diss.

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Datasheet Specifications

Part number: SSG4842N
Manufacturer: SeCoS
File Size: 136.58 KB
Datasheet: SSG4842N_SeCoS.pdf
Description: N-Ch Enhancement Mode Power MOSFET

Features

* Low RDS(on) Provides Higher Efficiency And Extends Battery Life. Low Thermal Impedance Copper Leadframe SOIC-8 Saves Board Space Fast Switching Speed High Performance Trench Technology A C N J H G Millimeter Min. Max. 5.80 6.20 4.80 5.00 3.80 4.00 0° 8° 0.40 0.90 0.19 0.25 1.27 TYP. K F REF. H J K

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SSG4842N N-Ch Enhancement Mode Power MOSFET SeCoS

SeCoS SSG4842N-like datasheet