* Low RDS(on) Provides Higher Efficiency And Extends Battery Life. Low Thermal Impedance Copper Leadframe SOIC-8 Saves Board Space Fast Switching Speed High Performance Trench Technology A C N J H G Millimeter Min. Max. 5.80 6.20 4.80 5.00 3.80 4.00 0° 8° 0.40 0.90 0.19 0.25 1.27 TYP. K F REF. H J K
SSG4842N Datasheet (136.58 KB)
SSG4842N
SeCoS
136.58 KB
N-ch enhancement mode power mosfet.
SSG4842N
Elektronische Bauelemente 23A , 40V , RDS(ON) 9 mΩ N-Ch Enhancement Mode Power MOSFET
RoHS Compliant Product A suffix of “-C” specifies halo.
📁 Related Datasheet
SSG4841P P-Ch Enhancement Mode Power MOSFET (SeCoS)
SSG4800J-C Dual-N Enhancement Mode Power MOSFET (SeCoS)
SSG4801 Dual-P Enhancement Mode Power MOSFET (SeCoS)
SSG4825P P-Channel Mode Power MOSFET (SeCoS)
SSG4825PE P-Channel Mode Power MOSFET (SeCoS)
SSG4835P P-Ch Enhancement Mode Power MOSFET (SeCoS)
SSG4835PR-C P-Ch Enhancement Mode Power MOSFET (SeCoS)
SSG4874N N-Channel Mode Power MOSFET (SeCoS)
SSG4890N Dual-N Enhancement Mode Power MOSFET (SeCoS)
SSG4224 N-Ch Enhancement Mode Power MOSFET (SeCoS)
