SSG4953 Datasheet - SeCoS

SSG4953 Dual-P Enhancement Mode Power MOSFET

The SSG4953 uses advanced trench technology to provide excellent on-resistance, low gate charge and operation with gate voltages as low as 2.5V. The device is suitable for use as a load switch or in PWM applications. It may be used in a common drain arrangement to from a bidirectional blocking switc.

SSG4953 Features

* Simple Drive Requirement

* Lower On-resistance

* Low Gate Charge MARKING 4953SS    = Date Code PACKAGE INFORMATION Package MPQ SOP-8 3K Leader Size 13’ inch SOP-8 B A HG LD M C JK F N E REF. A B C D E F G Millimeter Min. Max. 5.80 6.20 4.80 5.00 3.80 4.00 0° 8° 0.

SSG4953_SeCoS.pdf