SSG4957 - P-Channel Enhancement Mode Power MosFET

SeCoS

SSG4957 Datasheet Preview — Preview of SSG4957 PDF

Datasheet Details

Part number	SSG4957
Manufacturer	SeCoS
File Size	428.29 KB
Description	P-Channel Enhancement Mode Power MosFET
Datasheet	SSG4957-SeCoS.pdf

SSG4957 Product details

Description

The SSG4957 provide the designer with the best Combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.

Features

Low on-resistance.
Simple drive requirement.
Dual P MOSFET Package D1 D1 D2 D2 8 765 Date Code 4957SS Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 Continuous Drain Current3 Pulsed Drain Current 1 Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range 123 4 S1 G1 S2 G2 Symbol VDS VGS ID@TA=25oC ID@TA=70oC IDM PD@TA=25oC Tj, Tstg SOP-8 0.40 0.90 6.20 5.80 0.25 0.19 0.25 o 45 0.

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Published: May 28, 2024 |