SSG4957 P-Channel Enhancement Mode Power MosFET

SeCoS

Description

Elektronische Bauelemente SSG4957 -7.7A, -30V,RDS(ON) 24m P-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product .
The SSG4957 provide the designer with the best Combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.

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Datasheet Specifications

Part number: SSG4957
Manufacturer: SeCoS
File Size: 428.29 KB
Datasheet: SSG4957-SeCoS.pdf
Description: P-Channel Enhancement Mode Power MosFET

Features

* Low on-resistance
* Simple drive requirement
* Dual P MOSFET Package D1 D1 D2 D2 8 765 Date Code 4957SS Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 Continuous Drain Current3 Pulsed Drain Current 1 Total Power Dissipation Lin

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SSG4957 P-Channel Enhancement Mode Power MosFET SeCoS

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