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SSG4N10E Dual-N Enhancement Mode Power MOSFET

SSG4N10E Description

Elektronische Bauelemente SSG4N10E 4A, 100V, RDS(ON) 120mΩ Dual-N Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies ha.
The SSG4N10E provide the designer with the best Combination of fast switching, ruggedized device design, Ultra low on-resistance and cost-effectivenes.

SSG4N10E Features

* Low on-resistance Simple Drive Requirement Double-N MosFET Package SOP-8 LD M AC N JK HG B FE MARKING CODE 4N10ESS = Date Code PACKAGE INFORMATION Package MPQ SOP-8 3K Leader Size 13’ inch Dimensions in millimeters REF. A B C D E F G Millimeter Min. Max. 5.80 6.20 4.80 5.00 3.80 4

SSG4N10E Applications

* should be limited by total power dissipation. http://www. SeCoSGmbH. com/ 21-May-2014 Rev. A Any changes of specification will not be informed individually. Page 2 of 4 Elektronische Bauelemente CHARACTERISTICS CURVE SSG4N10E 4A, 100V, RDS(ON) 120mΩ Dual-N Enhancement Mode Power MOSFET http://ww

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Datasheet Details

Part number
SSG4N10E
Manufacturer
SeCoS
File Size
556.92 KB
Datasheet
SSG4N10E-SeCoS.pdf
Description
Dual-N Enhancement Mode Power MOSFET

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Dual-N Enhancement Mode Power MOSFET SeCoS
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