SSG6618 - N-Channel Enhancement Mode Power Mos.FET

SeCoS

Datasheet Details

Part number	SSG6618
Manufacturer	SeCoS
File Size	375.21 KB
Description	N-Channel Enhancement Mode Power Mos.FET
Datasheet	SSG6618-SeCoS.pdf

The SSG6618 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

Fast Switching Characteristic.
Simple Drive Requirement.
Low Gate Charge Date Code D1 8 D1 7 D2 6 D2 5 0 o 8 o 1.35 1.75 Dimensions in millimeters D 6618SC G 1 S1 2 G1 3 S2 4 G2 S Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Symbol VDS VGS ID@TA=25 C ID@TA=70 C IDM PD@TA=25 C o o o Ratings 30 ±20 7 5.8 30 2.5 0.02 Unit V V A A A W W/ C o o Total Power Dissip.

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Published: Sep 14, 2014 |