SSG6618 Datasheet - SeCoS

SSG6618, N-Channel Enhancement Mode Power Mos.FET

SSG6618 7A, 30V,RDS(ON) 30m£[ Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product SOP-8 .
The SSG6618 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

Features

* Fast Switching Characteristic
* Simple Drive Requirement
* Low Gate Charge Date Code D1 8 D1 7 D2 6 D2 5 0 o 8 o 1.35 1.75 Dimensions in millimeters D 6618SC G 1 S1 2 G1 3 S2 4 G2 S Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain

SSG6618-SeCoS.pdf