SSG6680 Datasheet - SeCoS

SSG6680, N-Channel Enhancement Mode Power Mos.FET

SSG6680 11.5A, 30V,RDS(ON) 11m£[ Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product SOP-8 .
The SSG6680 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

Features

* Surface Mount Package
* High Vgs Max. Rating Voltage
* Low On-Resistance Date Code D 8 D 7 D 6 D 5 0 o 8 o 1.35 1.75 Dimensions in millimeters D 6680SC G 1 S 2 S 3 S 4 G S Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current C

SSG6680-SeCoS.pdf