SSG6680 N-Channel Enhancement Mode Power Mos.FET

SeCoS

Description

SSG6680 11.5A, 30V,RDS(ON) 11m£[ Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product SOP-8 .
The SSG6680 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

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Datasheet Specifications

Part number: SSG6680
Manufacturer: SeCoS
File Size: 406.28 KB
Datasheet: SSG6680-SeCoS.pdf
Description: N-Channel Enhancement Mode Power Mos.FET

Features

* Surface Mount Package
* High Vgs Max. Rating Voltage
* Low On-Resistance Date Code D 8 D 7 D 6 D 5 0 o 8 o 1.35 1.75 Dimensions in millimeters D 6680SC G 1 S 2 S 3 S 4 G S Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current C

SSG6680 Distributors

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SSG6680 N-Channel Enhancement Mode Power Mos.FET SeCoS

SeCoS SSG6680-like datasheet