SSG6612N N-Ch Enhancement Mode Power MOSFET

SeCoS

Description

SSG6612N Elektronische Bauelemente 9.4 A, 30 V, RDS(ON) 22 m N-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies hal.
These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat diss.

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Datasheet Specifications

Part number: SSG6612N
Manufacturer: SeCoS
File Size: 570.19 KB
Datasheet: SSG6612N-SeCoS.pdf
Description: N-Ch Enhancement Mode Power MOSFET

Features

* Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe SOP-8 saves board space. Fast switching speed. High performance trench technology. A C N J K H G F E PACKAGE INFORMATION Package SOP-8 MPQ 2.5K LeaderSize 13’ inch

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N-Ch Enhancement Mode Power MOSFET SeCoS

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