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SSG6612N - N-Ch Enhancement Mode Power MOSFET

SeCoS

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Datasheet Details

Part number	SSG6612N
Manufacturer	SeCoS
File Size	570.19 KB
Description	N-Ch Enhancement Mode Power MOSFET
Datasheet	SSG6612N-SeCoS.pdf

SSG6612N Product details

Description

These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation.

Features

Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe SOP-8 saves board space. Fast switching speed. High performance trench technology. A C N J K H G F E.

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Published: Sep 14, 2014 |