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SSG6612N

N-Ch Enhancement Mode Power MOSFET

SSG6612N Features

* Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe SOP-8 saves board space. Fast switching speed. High performance trench technology. A C N J K H G F E PACKAGE INFORMATION Package SOP-8 MPQ 2.5K LeaderSize 13ā€™ inch

SSG6612N General Description

These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA c.

SSG6612N Datasheet (570.19 KB)

Preview of SSG6612N PDF

Datasheet Details

Part number:

SSG6612N

Manufacturer:

SeCoS

File Size:

570.19 KB

Description:

N-ch enhancement mode power mosfet.
SSG6612N Elektronische Bauelemente 9.4 A, 30 V, RDS(ON) 22 mļ— N-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of ā€œ-Cā€ specifies hal.

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SSG6612N N-Ch Enhancement Mode Power MOSFET SeCoS

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