SSG6679 P-Channel Enhancement Mode Power Mos.FET

SeCoS

Description

SSG6679 -14A, -30V,RDS(ON) 9m£[ Elektronische Bauelemente P-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product .
The SSG6679 provide the designer with the best Combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

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Datasheet Specifications

Part number: SSG6679
Manufacturer: SeCoS
File Size: 477.29 KB
Datasheet: SSG6679-SeCoS.pdf
Description: P-Channel Enhancement Mode Power Mos.FET

Features

* Lower On-Resistance
* Simple Drive Requirement
* Fast Switching Characteristics D 8 D 7 D 6 D 5 0 o 8 o 1.35 1.75 Dimensions in millimeters D Date Code 6679SC G 1 S 2 S 3 S 4 G S Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Curre

SSG6679 Distributors

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P-Channel Enhancement Mode Power Mos.FET SeCoS

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