SSP7468N
SeCoS
613.52kb
N-channel mosfet. These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power l
TAGS
📁 Related Datasheet
SSP7460N - N-Channel MOSFET
(SeCoS)
Elektronische Bauelemente
SSP7460N
12 A, 60 V, RDS(ON) 26 m N-Channel Enhancement MOSFET
RoHS Compliant Product A suffix of “-C” specifies halogen .
SSP7466N - N-Channel MOSFET
(SeCoS)
Elektronische Bauelemente
SSP7466N
20A, 60V, RDS(ON) 6mΩ N-Channel Enhancement Mode Power MOSFET
RoHS Compliant Product A suffix of “-C” specifies h.
SSP7431P - P-Channel MOSFET
(SeCoS)
Elektronische Bauelemente
SSP7431P
-17A, -30V, RDS(ON) 13 m P-Channel Enhancement MOSFET
RoHS Compliant Product A suffix of “-C” specifies halogen .
SSP7438N - N-Channel MOSFET
(SeCoS Halbleitertechnologie)
SSP7438N
Elektronische Bauelemente 22 A, 30 V, RDS(ON) 7.5 m N-Channel Enhancement MOSFET
RoHS Compliant Product A suffix of “-C” specifies halogen .
SSP7440N - N-Channel Enhancement Mode Power MOSFET
(SeCoS)
Elektronische Bauelemente
SSP7440N
15 A, 40 V, RDS(ON) 15 m N-Channel Enhancement MOSFET
RoHS Compliant Product A suffix of “-C” specifies halogen .
SSP7492N - N-Channel MOSFET
(SeCoS Halbleitertechnologie)
SSP7492N
Elektronische Bauelemente 6.2A, 150V, RDS(ON) 88 m N-Channel Enhancement MOSFET
RoHS Compliant Product A suffix of “-C” specifies halogen &.
SSP70N10A - Advanced Power MOSFET
(Samsung Electronics)
.
SSP70N10A - Advanced Power MOSFET
(Fairchild Semiconductor)
Advanced Power MOSFET
FEATURES
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Ope.
SSP7212-ADJ - 300mA Low Power LDO
(Siproin)
SSP7212-ADJ 300mA Low Power LDO
Features
programmable output: Minimum can go Low Power Consumption: 30μA (TYP.)
to 0.8V
Maximum Output Curre.
SSP7N60A - Advanced Power MOSFET
(Samsung Electronics)
.