Datasheet4U.com

SSP7N60B - 600V N-Channel MOSFET

Fairchild Semiconductor

📥 Download Datasheet

SSP7N60B Datasheet Preview — Preview of SSP7N60B PDF

datasheet Preview Page 2

datasheet Preview Page 3

Datasheet Details

Part number: SSP7N60B
Manufacturer: Fairchild Semiconductor
File Size: 915.56 KB
Datasheet: SSP7N60B_FairchildSemiconductor.pdf
Description: 600V N-Channel MOSFET

SSP7N60B Product details

Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.

Features

7.0A, 600V, RDS(on) = 1.2Ω @VGS = 10 V Low gate charge ( typical 38 nC) Low Crss ( typical 23 pF) Fast switching 100% avalanche tested Improved dv/dt capability TO-220F package isolation = 4.0kV (Note 6) D G G DS TO-220 SSP Series GD S TO-220F SSS Series S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC =.

📁 Related Datasheet

SSP7N60A - Advanced Power MOSFET (Samsung Electronics)
SSP70N10A - Advanced Power MOSFET (Samsung Electronics)
SSP7212-ADJ - 300mA Low Power LDO (Siproin)
SSP7431P - P-Channel MOSFET (SeCoS)
SSP7438N - N-Channel MOSFET (SeCoS Halbleitertechnologie)
SSP7440N - N-Channel Enhancement Mode Power MOSFET (SeCoS)
SSP7460N - N-Channel MOSFET (SeCoS)
SSP7466N - N-Channel MOSFET (SeCoS)

📌 All Tags

600V N-Channel MOSFET Fairchild Semiconductor

Fairchild Semiconductor SSP7N60B-like datasheet

SSP7N80A - Advanced Power MOSFET
SSP10N60A - Advanced Power MOSFET
SSP10N60B - 600V N-Channel MOSFET
SSP1N60B - N-Channel MOSFET
SSP2N60A - Advanced Power MOSFET
SSP2N60B - 600V N-Channel MOSFET

SSP7N60B Stock/Price