Datasheet4U Logo Datasheet4U.com

SSP7N80A

Advanced Power MOSFET

SSP7N80A Features

* Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max.) @ VDS = 800V Low RDS(ON) : 1.472 Ω (Typ.) 1 2 3 SSP7N80A BVDSS = 800 V RDS(on) = 1.8 Ω ID = 7 A TO-220 1.Gate 2. Drain 3. Source

SSP7N80A Datasheet (440.73 KB)

Preview of SSP7N80A PDF

Datasheet Details

Part number:

SSP7N80A

Manufacturer:

Fairchild Semiconductor

File Size:

440.73 KB

Description:

Advanced power mosfet.

📁 Related Datasheet

SSP7N60A Advanced Power MOSFET (Samsung Electronics)

SSP7N60B 600V N-Channel MOSFET (Fairchild Semiconductor)

SSP70N10A Advanced Power MOSFET (Samsung Electronics)

SSP70N10A Advanced Power MOSFET (Fairchild Semiconductor)

SSP7212-ADJ 300mA Low Power LDO (Siproin)

SSP7431P P-Channel MOSFET (SeCoS)

SSP7438N N-Channel MOSFET (SeCoS Halbleitertechnologie)

SSP7440N N-Channel Enhancement Mode Power MOSFET (SeCoS)

SSP7460N N-Channel MOSFET (SeCoS)

SSP7466N N-Channel MOSFET (SeCoS)

TAGS

SSP7N80A Advanced Power MOSFET Fairchild Semiconductor

Image Gallery

SSP7N80A Datasheet Preview Page 2 SSP7N80A Datasheet Preview Page 3

SSP7N80A Distributor