Part number:
SSP7N80A
Manufacturer:
Fairchild Semiconductor
File Size:
440.73 KB
Description:
Advanced power mosfet.
SSP7N80A Datasheet (440.73 KB)
Datasheet Details
SSP7N80A Features
* Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max.) @ VDS = 800V Low RDS(ON) : 1.472 Ω (Typ.) 1 2 3 SSP7N80A BVDSS = 800 V RDS(on) = 1.8 Ω ID = 7 A TO-220 1.Gate 2. Drain 3. Source
SSP7N80A Datasheet (440.73 KB)
Datasheet Details
SSP7N80A
Fairchild Semiconductor
440.73 KB
Advanced power mosfet.
📁 Related Datasheet
SSP7N60A Advanced Power MOSFET (Samsung Electronics)
SSP7N60B 600V N-Channel MOSFET (Fairchild Semiconductor)
SSP70N10A Advanced Power MOSFET (Samsung Electronics)
SSP70N10A Advanced Power MOSFET (Fairchild Semiconductor)
SSP7212-ADJ 300mA Low Power LDO (Siproin)
SSP7431P P-Channel MOSFET (SeCoS)
SSP7438N N-Channel MOSFET (SeCoS Halbleitertechnologie)
SSP7440N N-Channel Enhancement Mode Power MOSFET (SeCoS)
SSP7460N N-Channel MOSFET (SeCoS)
SSP7466N N-Channel MOSFET (SeCoS)
SSP7N80A Distributor
