SST2019L-C Dual N-Ch Enhancement Mode Power MOSFET

SeCoS

Description

Elektronische Bauelemente SST2019L-C 5A, 20V, RDS(ON) 27mΩ Dual N-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies.
The SST2019L-C is the highest performance trench Dual N-Ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for.

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Datasheet Specifications

Part number: SST2019L-C
Manufacturer: SeCoS
File Size: 195.47 KB
Datasheet: SST2019L-C-SeCoS.pdf
Description: Dual N-Ch Enhancement Mode Power MOSFET

Features

* Advanced High Cell Density Trench Technology Super Low Gate Charge Green Device Available F C H DG K J MARKING L2019 = Date Code PACKAGE INFORMATION Package MPQ SOT-26 3K Leader Size 7 inch REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.60 3.00 1.40 1.80 - 1.30 1.90 REF. 0

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SST2019L-C Dual N-Ch Enhancement Mode Power MOSFET SeCoS

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