STT6601 Datasheet - SeCoS

STT6601 MOSFET

The STT6601 is the N and P Channel enhancement mode power FET produced using high cell-density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage a.

STT6601 Features

* z APPLICATIONS z z z z z z z z N-Channel 30V/2.8A, RDS(ON) = 68mΩ@VGS = 10 V 30V/2.3A, RDS(ON) = 78mΩ@VGS = 4.5 V 30V/1.5A, RDS(ON) = 108mΩ@VGS = 2.5 V P-Channel -30V/-2.8A, RDS(ON) = 105mΩ@VGS = 10 V -30V/-2.5A, RDS(ON) = 120mΩ@VGS = 4.5 V -30V/-1.5A, RDS(ON) = 150mΩ@VGS = 2.5 V Super high dens

STT6601 Datasheet (485.76 KB)