Datasheet4U Logo Datasheet4U.com

STT6601

MOSFET

STT6601 Features

* z APPLICATIONS z z z z z z z z N-Channel 30V/2.8A, RDS(ON) = 68mΩ@VGS = 10 V 30V/2.3A, RDS(ON) = 78mΩ@VGS = 4.5 V 30V/1.5A, RDS(ON) = 108mΩ@VGS = 2.5 V P-Channel -30V/-2.8A, RDS(ON) = 105mΩ@VGS = 10 V -30V/-2.5A, RDS(ON) = 120mΩ@VGS = 4.5 V -30V/-1.5A, RDS(ON) = 150mΩ@VGS = 2.5 V Super high dens

STT6601 General Description

The STT6601 is the N and P Channel enhancement mode power FET produced using high cell-density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage a.

STT6601 Datasheet (485.76 KB)

Preview of STT6601 PDF

Datasheet Details

Part number:

STT6601

Manufacturer:

SeCoS

File Size:

485.76 KB

Description:

Mosfet.
STT6601 Elektronische Bauelemente (N-Ch) 2.8 A, 30 V, RDS(ON) 68 mΩ (P-Ch) -2.8 A, -30 V, RDS(ON) 120 mΩ N & P-Channel Enhancement Mode Mos.FET RoHS .

📁 Related Datasheet

STT6602 MOSFET (SeCoS)

STT6603 P-Channel MOSFET (SamHop Microelectronics)

STT600 N-Channel MOSFET (SamHop Microelectronics)

STT60GK08 Thyristor-Thyristor Modules (Sirectifier)

STT60GK08B Thyristor-Thyristor Modules (Sirectifier)

STT60GK12 Thyristor-Thyristor Modules (Sirectifier)

STT60GK12B Thyristor-Thyristor Modules (Sirectifier)

STT60GK14 Thyristor-Thyristor Modules (Sirectifier)

STT60GK14B Thyristor-Thyristor Modules (Sirectifier)

STT60GK16 Thyristor-Thyristor Modules (Sirectifier)

TAGS

STT6601 MOSFET SeCoS

Image Gallery

STT6601 Datasheet Preview Page 2 STT6601 Datasheet Preview Page 3

STT6601 Distributor