Datasheet Details
- Part number
- SDG5521C
- Manufacturer
- SeCoS Halbleitertechnologie
- File Size
- 93.46 KB
- Datasheet
- SDG5521C-SeCoSHalbleitertechnologie.pdf
- Description
- N and P-Ch Enhancement Mode Power MOSFET
SDG5521C Description
SDG5521C Elektronische Bauelemente N-Ch: 5A, 20V, RDS(ON) 58 mΩ P-Ch: -4.7A, -20V, RDS(ON) 77 mΩ N & P-Ch Enhancement Mode Power MOSFET RoHS Compliant.
These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat diss.
SDG5521C Features
* Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe DFN2
* 3 saves board space. Fast switching speed. High performance trench technology. REF. A B C D E
PACKAGE INFORMATION
Package DFN2
* 3 MPQ 3K Leader Size 13’ inch
Millimeter Min. Max. 3.
SDG5521C Applications
* are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. DFN2
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