Datasheet Details
- Part number
- SMG2361P
- Manufacturer
- SeCoS Halbleitertechnologie
- File Size
- 444.48 KB
- Datasheet
- SMG2361P-SeCoSHalbleitertechnologie.pdf
- Description
- P-Channel MOSFET
SMG2361P Description
SMG2361P Elektronische Bauelemente -3.4A , -60V , RDS(ON) 210 mΩ P-Channel Enhancement MOSFET RoHS Compliant Product A suffix of “-C” specifies halog.
These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat diss.
SMG2361P Features
* Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe SC-59 saves board space. Fast switching speed. High performance trench technology. 1
K
E D
F
G
Millimeter Min. Max. 2.70 3.10 2.25 3.00 1.30 1.70 1.00 1.40 1.70 2.30 0.35 0.50
H
Millimeter M
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