BDY60
Seme LAB
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Bipolar npn device.
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BDY60 - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 60V (Min) ·Low Collector-Emitter Saturation Voltage ·E.
BDY61 - Bipolar NPN Device
(Seme LAB)
BDY61
Dimensions in mm (inches).
25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135)
6.35 (0.25) 9.15 (0.36)
Bipolar NPN .
BDY61 - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 60V (Min) ·Low Collector-Emitter Saturation Voltage ·E.
BDY62 - Bipolar NPN Device
(Seme LAB)
BDY62
Dimensions in mm (inches).
25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135)
6.35 (0.25) 9.15 (0.36)
Bipolar NPN .
BDY62 - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 30V (Min) ·Low Collector-Emitter Saturation Voltage ·E.
BDY10 - Silicon NPN Transistor
(Valvo)
OEM:Valvo
Transistor BDY11
Datasheet
Silicon NPN Transistor BDY11
100V / 4A
DATASHEET
OEM – Valvo
Source: Valvo Datenbuch1967
Datasheet Rev. 1.3.
BDY11 - Silicon NPN Transistor
(Valvo)
OEM:Valvo
Transistor BDY11
Datasheet
Silicon NPN Transistor BDY11
100V / 4A
DATASHEET
OEM – Valvo
Source: Valvo Datenbuch1967
Datasheet Rev. 1.3.
BDY12 - NPN Silicon Planar Trnasistors
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BDY13 - NPN Silicon Planar Trnasistors
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BDY13-6 - Silicon NPN Power Transistor
(Inchange Semiconductor)
isc Silicon NPN Power Transistor
BDY13-6
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 60V(Min.) ·Collector-Emitter Saturation Volta.