BDY97
Seme LAB
12.15kb
Bipolar npn device.
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📁 Related Datasheet
BDY90 - NPN Transistor
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isc Silicon NPN Power Transistor
DESCRIPTION ·High DC Current Gain-
: hFE= 30-120@IC= 5A ·Excellent Safe Operating Area ·High Current Capability ·Min.
BDY90 - HIGH CURRENT NPN SILICON TRANSISTOR
(STMicroelectronics)
BDY90
HIGH CURRENT NPN SILICON TRANSISTOR
s
SGS-THOMSON PREFERRED SALESTYPE
APPLICATIONS LINEAR AND EQUIPMENT
SWITCHING
INDUSTRIAL
DESCRIPTION Th.
BDY90 - NPN SILICON TRANSISTOR
(Seme LAB)
BDY90
38.61 (1.52) 39.12 (1.54) 29.9 (1.177) 30.4 (1.197) 16.64 (0.655) 17.15 (0.675) 0.97 (0.060) 1.10 (0.043)
22.23 (0.875) max.
MECHANICAL DATA
D.
BDY90A - NPN Transistor
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DESCRIPTION ·High Current Capability ·Collector-Emitter Sustaining Voltage-
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BDY91 - NPN Transistor
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isc Silicon NPN Power Transistor
DESCRIPTION ·High DC Current Gain-
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BDY92 - NPN Transistor
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: hFE= 30-120@IC= 5A ·Excellent Safe Operating Area ·High Current Capability ·Min.
BDY93 - NPN Transistor
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isc Silicon NPN Power Transistors
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 350V(Min) ·High Switching Speed ·Minimum Lot-to-Lot v.
BDY93 - Bipolar NPN Device
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BDY93
Dimensions in mm (inches).
25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135)
6.35 (0.25) 9.15 (0.36)
Bipolar NPN .
BDY94 - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistors
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 300V(Min) ·High Switching Speed ·Minimum Lot-to-Lot v.
BDY94 - Bipolar NPN Device
(Seme LAB)
BDY94
Dimensions in mm (inches).
25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135)
6.35 (0.25) 9.15 (0.36)
Bipolar NPN .
