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BDY94 NPN Transistor

BDY94 Description

isc Silicon NPN Power Transistors .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 300V(Min). High Switching Speed. Minimum Lot-to-Lot variations for robust device perform.

BDY94 Applications

* Designed for use as high-speed power switch at high voltage. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 750 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 4 A ICM Collector

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Datasheet Details

Part number
BDY94
Manufacturer
INCHANGE
File Size
198.76 KB
Datasheet
BDY94-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
INCHANGE BDY94-like datasheet