Datasheet4U Logo Datasheet4U.com

BDY94 - NPN Transistor

📥 Download Datasheet

Preview of BDY94 PDF
datasheet Preview Page 2

Datasheet Details

Part number BDY94
Manufacturer INCHANGE
File Size 198.76 KB
Description NPN Transistor
Datasheet download datasheet BDY94-INCHANGE.pdf

BDY94 Product details

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 300V(Min) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use as high-speed power switch at high voltage.ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 750 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 4 A ICM Collector Current-

📁 BDY94 Similar Datasheet

  • BDY96 - Bipolar NPN Device (Seme)
  • BDY96D - Silicon NPN Power Transistor (Inchange Semiconductor)
  • BDY97 - Bipolar NPN Device (Seme LAB)
  • BDY98 - Bipolar NPN Device (Seme)
  • BDY10 - Silicon NPN Transistor (Valvo)
  • BDY11 - Silicon NPN Transistor (Valvo)
  • BDY12 - NPN Silicon Planar Trnasistors (Siemens Semiconductor Group)
  • BDY13 - NPN Silicon Planar Trnasistors (Siemens Semiconductor Group)
Other Datasheets by INCHANGE
Published: |