BDY93 NPN Transistor

INCHANGE

Description

isc Silicon NPN Power Transistors .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 350V(Min). High Switching Speed. Minimum Lot-to-Lot variations for robust device perform.

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Datasheet Specifications

Part number: BDY93
Manufacturer: INCHANGE
File Size: 198.78 KB
Datasheet: BDY93-INCHANGE.pdf
Description: NPN Transistor

Applications

* Designed for use as high-speed power switch at high voltage. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 750 V VCEO Collector-Emitter Voltage 350 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 4 A ICM Collector

BDY93 Distributors

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BDY93 NPN Transistor INCHANGE

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