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BDY96D Datasheet - Inchange Semiconductor

BDY96D Silicon NPN Power Transistor

*Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 350V(Min) *Low Collector-Emitter Saturation Voltage- : VCE(sat) = 1.5V(Max.) @ IC= 2.5A *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS *Designed for use in switching regulators app.

BDY96D-InchangeSemiconductor.pdf

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Datasheet Details

Part number:

BDY96D

Manufacturer:

Inchange Semiconductor

File Size:

207.21 KB

Description:

Silicon npn power transistor.

BDY96D Distributor

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BDY96D BDY96D Silicon NPN Power Transistor Inchange Semiconductor