BDY96D Silicon NPN Power Transistor

Inchange Semiconductor

Description

isc Silicon NPN Power Transistor .
Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 350V(Min). Low Collector-Emitter Saturation Voltage- : VCE(sat) = 1.

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Datasheet Specifications

Part number: BDY96D
Manufacturer: Inchange Semiconductor
File Size: 207.21 KB
Datasheet: BDY96D-InchangeSemiconductor.pdf
Description: Silicon NPN Power Transistor

Applications

* Designed for use in switching regulators applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 750 V VCEO Collector-Emitter Voltage 350 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 10 A ICM Collector Curr

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BDY96D Silicon NPN Power Transistor Inchange Semiconductor

Inchange Semiconductor BDY96D-like datasheet