
Part number:
BFY75
Manufacturer:
Seme LAB
File Size:
10.36kb
Download:
Description:
Bipolar npn device.
BFY75
Seme LAB
10.36kb
Bipolar npn device.
📁 Related Datasheet
BFY72 - NPN Transistor
(SGS-ATES)
.
BFY74 - NPN Transistor
(SGS-ATES)
.
BFY75 - NPN Transistor
(SGS-ATES)
.
BFY76 - Bipolar NPN Device in a Hermetically sealed TO18 Metal Package
(Seme LAB)
BFY76
Dimensions in mm (inches).
5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178)
Bipolar NPN Device in a Hermetically sealed TO18 Metal Package..
BFY76 - NPN Transistor
(SGS-ATES)
.
BFY77 - Bipolar NPN Device in a Hermetically sealed TO18 Metal Package
(Seme LAB)
BFY77
Dimensions in mm (inches).
5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178)
Bipolar NPN Device in a Hermetically sealed TO18 Metal Package..
BFY180 - HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor For low power amplifiers at collector currents from 0.2 to 2.5 mA)
(Siemens Semiconductor Group)
HiRel NPN Silicon RF Transistor
Features ¥ HiRel Discrete and Microwave Semiconductor ¥ For low power amplifiers at collector currents from 0.2 to 2.5.
BFY180 - HiRel NPN Silicon RF Transistor
(Infineon Technologies AG)
BFY180 HiRel NPN Silicon RF Transistor • • • • •
HiRel Discrete and Microwave Semiconductor For low power amplifiers at collector currents from 0,2 mA.
BFY181 - HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor)
(Siemens Semiconductor Group)
HiRel NPN Silicon RF Transistor
Features ¥ HiRel Discrete and Microwave Semiconductor ¥ For low noise, high gain broadband amplifiers at collector cur.
BFY181 - HiRel NPN Silicon RF Transistor
(Infineon Technologies AG)
BFY181 HiRel NPN Silicon RF Transistor • • • • •
HiRel Discrete and Microwave Semiconductor For low noise, high-gain broadband amplifiers at collector.