* TO220
* Multi
* base for efficient energy distribution across the chip resulting in significantly improved switching and energy ratings across full temperature range.
* Ion implant and high accuracy masking for tight control of characteristics from batch to batch.
* Tri
BUL54
Seme LAB
19.71 KB
Npn transistor.
LAB MECHANICAL DATA Dimensions in mm 10.2 1.3 4.5 SEME BUL54A ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR.
📁 Related Datasheet
BUL50A NPN Transistor (Seme LAB)
BUL510 NPN Transistor (STMicroelectronics)
BUL510 SILICON POWER TRANSISTOR (SavantIC)
BUL512HI BUL512HI Circuit (ETC)
BUL52 NPN Transistor (Seme LAB)
BUL52A NPN Transistor (INCHANGE)
BUL52AFI NPN Transistor (Seme LAB)
BUL52B NPN Transistor (Seme LAB)
BUL52B SILICON POWER TRANSISTOR (SavantIC)
BUL52BFI NPN Transistor (Seme LAB)
