BUL54ASMD Datasheet (Seme LAB)

BUL54ASMD, NPN Transistor

BUL54ASMD MECHANICAL DATA Dimensions in mm 0 .8 9 (0 .0 3 5 ) m in .

3 .7 0 (0 .1 4 6 ) 3 .7 0 (0 .1 4 6 ) 3 .4 1 (0 .1 3 4 ) 3 .4 1 (0 .1 3 4 ) 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR 3 .6 0 (0 .1 4 2 ) M a x .

1 3 2 SEMEFAB DESIGNED AND DIFFUSED DIE HIGH VOLTAGE FAST SWITCHING (tf = 40ns) EXCEPTIONAL HIGH TEMPERATURE PERFORMANCE HIGH ENERGY RATING

BUL54ASMD Features

* Multi

* base design for efficient energy distribution across the chip resulting in significantly improved switching and energy ratings across full temperature range.

* Ion implant and high accuracy masking for tight control of characteristics from batch to batch.

* Tr