BUL62A Datasheet - Seme LAB

BUL62A NPN Transistor

LAB MECHANICAL DATA Dimensions in mm (inches) 6.40 (0.252) 6.78 (0.267) 5.21 (0.205) 5.46 (0.215) SEME BUL62A 2.18 (0.086) 2.44 (0.096) 0.84 (0.033) 0.94 (0.037) ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR Designed for use in electronic ballast applications 1.09 (0.043) 1.30 (0.051) 5.97 (0.235) 6.22 (0.245) 1 2 3 0.76 (0.030) 1.14 (0.045) 0.64 (0.025) 0.89 (0.035) 8.89 (0.350) 9.78 (0.385) SEMEFAB DE.

BUL62A Features

* Multi

* base for efficient energy distribution across the chip resulting in significantly improved switching and energy ratings across full temperature range.

* Ion implant and high accuracy masking for tight control of characteristics from batch to batch.

* Triple Gu

BUL62A_SemeLAB.pdf