BUL62B Datasheet - Seme LAB

BUL62B NPN Transistor

LAB MECHANICAL DATA Dimensions in mm (inches) 6.40 (0.252) 6.78 (0.267) 5.21 (0.205) 5.46 (0.215) SEME BUL62B 2.18 (0.086) 2.44 (0.096) 0.84 (0.033) 0.94 (0.037) ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR Designed for use in electronic ballast applications 1.09 (0.043) 1.30 (0.051) 5.97 (0.235) 6.22 (0.245) 1 2 3 0.76 (0.030) 1.14 (0.045) 0.64 (0.025) 0.89 (0.035) 8.89 (0.350) 9.78 (0.385) SEMEFAB DE.

BUL62B Features

* Multi

* base for efficient energy distribution across the chip resulting in significantly improved switching and energy ratings across full temperature range.

* Ion implant and high accuracy masking for tight control of characteristics from batch to batch.

* Triple Gu

BUL62B_SemeLAB.pdf

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Datasheet Details

Part number:

BUL62B

Manufacturer:

Seme LAB

File Size:

19.79 KB

Description:

Npn transistor.

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BUL62B BUL62B NPN Transistor Seme LAB

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