BUL65A Datasheet (Seme LAB) - HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR

BUL65A, HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR

SEME LAB MECHANICAL DATA Dimensions in mm 6.40 (0.252) 6.78 (0.267) 5.21 (0.205) 5.46 (0.215) 123 2.18 (0.086) 2.44 (0.096) 0.84 (0.033) 0.94 (0.037) 1.09 (0.043) 1.30 (0.051) 5.97 (0.235) 6.22 (0.245) 0.76 (0.030) 1.14 (0.045) 0.64 (0.025) 0.89 (0.035) 8.89 (0.350) 9.78 (0.385) BUL65A ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR Designed for use in electronic ballast applications SEMEFAB DESIGNED AND DIFFUSED DIE HIGH VOLTAGE

BUL65A Features

* Multi

* base for efficient energy distribution across the chip resulting in significantly improved switching and energy ratings across full temperature range.

* Ion implant and high accuracy masking for tight control of characteristics from batch to batch.

* Triple Gu