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BUL65A HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR

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Description

SEME LAB MECHANICAL DATA Dimensions in mm 6.40 (0.252) 6.78 (0.267) 5.21 (0.205) 5.46 (0.215) 123 2.18 (0.086) 2.44 (0.096) 0.84 (0.033) 0.94 (0.037.

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Datasheet Specifications

Part number
BUL65A
Manufacturer
Seme LAB
File Size
19.06 KB
Datasheet
BUL65A-SemeLAB.pdf
Description
HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR

Features

* Multi
* base for efficient energy distribution across the chip resulting in significantly improved switching and energy ratings across full temperature range.
* Ion implant and high accuracy masking for tight control of characteristics from batch to batch.
* Triple Gu

Applications

* SEMEFAB DESIGNED AND DIFFUSED DIE
* HIGH VOLTAGE
* FAST SWITCHING
* HIGH ENERGY RATING 2.31 (0.091) Typ. 2.31 (0.091) Typ. 4.60 (0.181) Typ. 0.46 (0.018) 0.61 (0.024) 1.04 (0.041) 1.14 (0.045) Pin 1
* Base I-PAK (TO251) Pad 2
* Collector Pad 3

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