* Multi
* base for efficient energy distribution across the chip resulting in significantly improved switching and energy ratings across full temperature range.
* Ion implant and high accuracy masking for tight control of characteristics from batch to batch.
* Triple Gu
BUL65A
Seme LAB
19.06 KB
High voltage high speed npn silicon power transistor.
SEME
LAB
MECHANICAL DATA Dimensions in mm
6.40 (0.252) 6.78 (0.267) 5.21 (0.205) 5.46 (0.215)
123
2.18 (0.086) 2.44 (0.096)
0.84 (0.033) 0.94 (0.037.
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