* SIMPLIFIED AMPLIFIER DESIGN PIN 1 PIN 3 PIN 5 PIN 7 PI N OH DD SOURCE (COMMON) PIN 2 DRAIN 2 PIN 4 SOURCE (COMMON) PIN 6 GATE 1 PIN 8 DRAIN 1 SOURCE (COMMON) GATE 2 SOURCE (COMMON) DIM mm A 9.14 B 12.70 C 45° D 6.86 E 0.76 F 9.78 G 19.05 H 4.19 I 3.17 J 1.52R
D1034UK
Seme LAB
65.96 KB
Metal gate rf silicon fet.
TetraFET
D1034UK
ROHS COMPLIANT METAL GATE RF SILICON FET
MECHANICAL DATA
B A
E
C
(2 pls)
K
12 34
FG
87 65 J Typ .
D M Q
GOLD METALLISED MU.
📁 Related Datasheet
D103 - 2SD103
(Inchange Semiconductor)
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistors
2SD103
DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)C.
D1030N - Rectifier Diode
(Infineon)
N
Netz-Gleichrichterdiode Rectifier Diode
Datenblatt / Data sheet
D1030N
Elektrische Eigenschaften / Electrical properties
Höchstzulässige Werte / .
D1030UK - METAL GATE RF SILICON FET
(Seme LAB)
TetraFET
D1030UK
ROHS COMPLIANT METAL GATE RF SILICON FET
MECHANICAL DATA
C (2 pls)
1 HD
B
2
3
5
4
E (4 pls)
F I
G (typ)
P (2 pls) A
PIN 1 .
D1031 - METAL GATE RF SILICON FET
(Seme LAB)
TetraFET
D1031UK
METAL GATE RF SILICON FET
MECHANICAL DATA
Dimensions in mm.
5.50 ± 0.15 1.27 ± 0.05 2 PL. 2 PL. 0.47 1.65 2 PL. 0.3 R. 4 PL.
2.313.
D1031SH - Fast Hard Drive Diode
(Infineon)
Schnelle beschaltungslose Diode Fast Hard Drive Diode
Technische Information / technical information
D1031SH
Key Peanranmdaetteenrs VRRM IFAVM IFSM .
D1031UK - METAL GATE RF SILICON FET
(Seme LAB)
TetraFET
D1031UK
ROHS COMPLIANT METAL GATE RF SILICON FET
MECHANICAL DATA
Dimensions in mm.
GOLD METALLISED MULTI-PURPOSE SILICON
2 PL. 0.47
1.65.
D1033 - 2SD1033
(NEC)
.
D1036UK - METAL GATE RF SILICON FET
(Seme LAB)
TetraFET
D1036UK
ROHS COMPLIANT METAL GATE RF SILICON FET
MECHANICAL DATA
A B
1
2
4
3
M
G
C
D E F
HK
PIN 1 PIN 3
SOURCE SOURCE
DM
PIN 2.
