IRFM5210 Datasheet, Mosfet, Seme LAB

IRFM5210 Features

• Mosfet
• FAST SWITCHING
• SCREENING OPTIONS AVAILABLE TO-254AA Pin 1
    –Drain Pin 2
    – Source Pin 3
    – Gate ABSOLUTE MAXIMUM RATIN

PDF File Details

Part number:

IRFM5210

Manufacturer:

Seme LAB

File Size:

16.80kb

Download:

📄 Datasheet

Description:

P-channel mosfet.

IRFM5210 Application

• Applications VDSS ID RDS(on) 100V 34A 0.07Ω 30.35 (1.195) 31.40 (1.235) 16.89 (0.665) 17.40 (0.685) 13.59 (0.535) 13.84 (0.545) 1 2 3 0.89 (0.

TAGS

IRFM5210

Seme LAB

📁 Related Datasheet

IRFM014A - Power MOSFET (Samsung)

      )($785(6 Qýýý$YDODQFKHýý5XJJHGýý7HFKQRORJ\ Qýýý5XJJHGýý*DWHýý2[LGHýý7HFKQRORJ\ý Qýýý/RZHUýý,QSXWýý&DSDFLWDQFH Qýýý,PSURYHGýý*D.

IRFM044 - N-Channel Power MOSFET (International Rectifier)
PD-90708D IRFM044 POWER MOSFET THRU-HOLE (TO-254AA) Product Summary Part Number RDS(on) IRFM044 0.04 ID 35A* 60V, N-CHANNEL HEXFET MOSFET TECH.

IRFM054 - N-CHANNEL POWER MOSFET (Seme LAB)
IRFM054 MECHANICAL DATA Dimensions in mm (inches) 13.59 (0.535) 13.84 (0.545) 3.53 (0.139) Dia. 3.78 (0.149) 6.32 (0.249) 6.60 (0.260) 1.02 (0.040) 1.

IRFM064 - POWER MOSFET THRU-HOLE (TO-254AA) (International Rectifier)
PD - 90875A POWER MOSFET THRU-HOLE (TO-254AA) Product Summary Part Number IRFM064 IRFM064 60V, N-CHANNEL HEXFET MOSFET TECHNOLOGY ® RDS(on) 0.017 Ω.

IRFM110A - Advanced Power MOSFET (Fairchild Semiconductor)
Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Ope.

IRFM120A - Power MOSFET (Fairchild Semiconductor)
Advanced Power MOSFET FEATURES IRFM120A BVDSS = 100 V RDS(on) = 0.2 ID = 2.3 A SOT-223 2 IEEE802.3af Compatible Avalanche Rugged Technology R.

IRFM120A - Power MOSFET (ON Semiconductor)
Advanced Power MOSFET IRFM120A FEATURES IEEE802.3af Compatible Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitanc.

IRFM120ATF - N-Channel 100V MOSFET (VBsemi)
IRFM120ATF-VB IRFM120ATF-VB Datasheet N-Channel 100-V (D-S) MOSFET .VBsemi. PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.100 at VGS = 10 V 100 0.1.

IRFM1310ST - N-CHANNEL POWER MOSFET (Seme LAB)
IRFM1310ST MECHANICAL DATA Dimensions in mm (inches) 2 6 .4 2 (1 .0 4 0 ) 2 0 .0 7 (0 .7 9 0 ) 1 3 .7 2 (0 .5 4 0 ) N–CHANNEL POWER MOSFET VDSS ID(c.

IRFM140 - HEXFET TRANSISTOR (International Rectifier)
.