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SML25SCM650N2B Silicon Carbide N-Channel Power MOSFET

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Description

SILICON CARBIDE N-CHANNEL POWER MOSFET SML25SCM650N2B 650V SiC MOSFET In A Hermetic SMD1 (TO-276AB) Package Designed For High Temperature / Power Effi.

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Datasheet Specifications

Part number
SML25SCM650N2B
Manufacturer
Seme LAB
File Size
311.59 KB
Datasheet
SML25SCM650N2B-SemeLAB.pdf
Description
Silicon Carbide N-Channel Power MOSFET

Applications

* ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated) VDS Drain - Source Voltage VGS Gate - Source Voltage ID Continuous Drain Current (1) Tc = 25°C IDM Pulsed Drain Current (2) PD Total Power Dissipation at TJ = 25°C Derate Above 25°C TJ Maximum Junction Temperature Tstg Storage Temperature

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