HCD65R360S Datasheet - SemiHow

HCD65R360S - 650V N-Channel Super Junction MOSFET

HCD65R360S Features

* Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 23 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) ȍ7S#9GS=10V 100% Avalanche Test

HCD65R360S-SemiHow.pdf

HCD65R360S Datasheet Preview — Preview of HCD65R360S PDF

Datasheet Details

Part number:

HCD65R360S

Manufacturer:

SemiHow

File Size:

265.95 KB

Description:

650v n-channel super junction mosfet.

HCD65R360S Distributor

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HCD65R360S 650V N-Channel Super Junction MOSFET SemiHow