HCD65R380 Datasheet - SemiHow

HCD65R380 - 650V N-Channel Super Junction MOSFET

HCD65R380 Features

* Very Low FOM (RDS(on) X Qg)

* Extremely low switching loss

* Excellent stability and uniformity

* 100% Avalanche Tested

* Built-in ESD Diode Key Parameters Parameter BVDSS @Tj,max ID RDS(on), max Qg, Typ Value 700 10.4 0.38 22.6 Unit V A Ω nC Application

Datasheet Details

HCD65R380

SemiHow

249.68 KB

650v n-channel super junction mosfet.

HCD65R380 Distributor

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