HCD65R660S - 650V N-Channel Super Junction MOSFET

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SemiHow

Part number	HCD65R660S
Manufacturer	SemiHow
File Size	283.50 KB
Description	650V N-Channel Super Junction MOSFET
Datasheet	HCD65R660S Datasheet
Additional preview pages of the HCD65R660S datasheet.

Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 14 nC (Typ. ) Extended Safe Operating Area Lower RDS(ON) ȍ7S#9GS=10V 100% Avalanche Tested BVDSS = 650 V RDS(on) typ = 0.6 ȍ ID = 6.2 A D-PAK I-PAK 2 1 1 32 3 HCD65R660S HCU65R660S 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter V.

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Published: Apr 8, 2016 |