HCP20NT60V - N-Channel MOSFET

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Datasheet Details

Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 54 nC (Typ. ) Extended Safe Operating Area Lower RDS(ON) : 0.17 ȍ7S#9GS=10V 100% Avalanche Tested RoHS Compliant TO-220 1 23 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage.

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Published: Apr 14, 2017 |