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HCP20NT60V N-Channel MOSFET

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Description

HCP20NT60V Apr 2014 HCP20NT60V 600V N-Channel Super Junction MOSFET BVDSS = 600 V RDS(on) typ = 0.17 ȍ ID = 20 A .

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Datasheet Specifications

Part number
HCP20NT60V
Manufacturer
SemiHow
File Size
387.95 KB
Datasheet
HCP20NT60V-SemiHow.pdf
Description
N-Channel MOSFET

Features

* ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 54 nC (Typ. ) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) : 0.17 ȍ 7S #9GS=10V ‰ 100% Avalanche Teste

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N-Channel MOSFET SemiHow
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