HCP65R360S - 650V N-Channel Super Junction MOSFET

SemiHow

Datasheet Details

Part number	HCP65R360S
Manufacturer	SemiHow
File Size	175.02 KB
Description	650V N-Channel Super Junction MOSFET
Datasheet	HCP65R360S-SemiHow.pdf

Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 23 nC (Typ. ) Extended Safe Operating Area Lower RDS(ON) ȍ7S#9GS=10V 100% Avalanche Tested November 2014 BVDSS = 650 V RDS(on) typ = 0.32 ȍ ID = 11 A TO-220 1 23 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM.

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Published: Apr 8, 2016 |