HCS70R660S - N-Channel Super Junction MOSFET

SemiHow

Datasheet Details

Part number	HCS70R660S
Manufacturer	SemiHow
File Size	181.42 KB
Description	N-Channel Super Junction MOSFET
Datasheet	HCS70R660S-SemiHow.pdf

Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 14 nC (Typ. ) Extended Safe Operating Area Lower RDS(ON) ȍ7S#9GS=10V 100% Avalanche Tested Jan 2015 BVDSS = 700 V RDS(on) typ ȍ ID = 6.2 A TO-220F 12 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS E.

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Published: Apr 8, 2016 |