Part number:
HFS10N65S
Manufacturer:
SemiHow
File Size:
162.62 KB
Description:
N-channel mosfet.
* Originative New Design
* Superior Avalanche Rugged Technology
* Robust Gate Oxide Technology
* Very Low Intrinsic Capacitances
* Excellent Switching Characteristics
* Unrivalled Gate Charge : 29 nC (Typ.)
* Extended Safe Operating Area
* Lower RDS(ON) ȍ7S
HFS10N65S Datasheet (162.62 KB)
HFS10N65S
SemiHow
162.62 KB
N-channel mosfet.
📁 Related Datasheet
HFS10N65U - N-Channel MOSFET
(SemiHow)
HFS10N65U
HFS10N65U
650V N-Channel MOSFET
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology V.
HFS10N60S - N-Channel MOSFET
(SemiHow)
HFS10N60S
Nov 2007
HFS10N60S
600V N-Channel MOSFET
BVDSS = 600 V RDS(on) typ = 0.67 ȍ ID = 9.5 A
FEATURES
Originative New Design Superior Aval.
HFS10N60U - N-Channel MOSFET
(SemiHow)
HFS10N60U
HFS10N60U
600V N-Channel MOSFET
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology V.
HFS10N80 - N-Channel MOSFET
(SemiHow)
HFS10N80
Dec 2010
HFS10N80
800V N-Channel MOSFET
BVDSS = 800 V RDS(on) typ = 0.92 ȍ ID = 9.4 A
FEATURES
Originative New Design Superior Avalan.
HFS11N40 - 400V N-Channel MOSFET
(SemiHow)
..
HFS11N40
Dec 2005
BVDSS = 400 V
HFS11N40
400V N-Channel MOSFET
FEATURES
Originative New Design Superior Avalanche Rugged T.
HFS11N80Z - 800V N-Channel MOSFET
(SemiHow)
HFP11N80Z_HFS11N80Z
Oct 2016
HFP11N80Z / HFS11N80Z
800V N-Channel MOSFET
Features
Superior Avalanche Rugged Technology Robust Gate Oxide Techno.
HFS12N60S - N-Channel MOSFET
(SemiHow)
HFS12N60S
Nov 2007
HFS12N60S
600V N-Channel MOSFET
BVDSS = 600 V RDS(on) typ = 0.53 ȍ ID = 12 A
FEATURES
Originative New Design Superior Avala.
HFS12N60U - N-Channel MOSFET
(SemiHow)
HFS12N60U
HFS12N60U
600V N-Channel MOSFET
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology V.