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HFS11N40 Datasheet - SemiHow

HFS11N40 400V N-Channel MOSFET

HFS11N40 Features

*  Originative New Design  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology  Very Low Intrinsic Capacitances  Excellent Switching Characteristics  Unrivalled Gate Charge : 35 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 0.38 Ω (Typ.) @VGS=10V  100% Avalanche Test

HFS11N40 Datasheet (0.97 MB)