HFS10N80 - N-Channel MOSFET
HFS10N80 Features
* Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 58 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 0.92 ȍ (Typ.) @VGS=10V 100% Avalanche Test
