HFW9N50 Datasheet - SemiHow

HFW9N50 N-Channel MOSFET

HFW9N50 Features

*  Originative New Design  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology  Very Low Intrinsic Capacitances  Excellent Switching Characteristics  Unrivalled Gate Charge : 35 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 0.58 Ω (Typ.) @VGS=10V  100% Avalanche Test

HFW9N50 Datasheet (0.96 MB)