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SM18N60S - 600V N-Channel MOSFET

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Datasheet Details

Part number	SM18N60S
Manufacturer	SemiMOS
File Size	1.20 MB
Description	600V N-Channel MOSFET
Datasheet	SM18N60S-SemiMOS.pdf

SM18N60S Product details

Features

Low Intrinsic Capacitances.
Excellent Switching Characteristics.
Extended Safe Operating Area.
Unrivalled Gate Charge :Qg=75 nC (Typ. ).
BVDSS=600V,ID=18A.
RDS(on) : 0.40Ω (Max) @VG=10V.
100% Avalanche Tested 1.Gate (G) 2.Drain (D) 3.Source (S) Absolute Maximum Ratings (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VDSS ID Drain-Source Voltage Drain Current 600 V TC=25℃ 18 TC=100℃ 12.5 A VGS(TH) Gat.

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Published: Mar 30, 2025 |