SM12N60S - 600V N-Channel MOSFET

Datasheet Details

Low Intrinsic Capacitances.
Excellent Switching Characteristics.
Extended Safe Operating Area.
Unrivalled Gate Charge :Qg= 42nC (Typ. ).
BVDSS=600V,ID=12A.
RDS(on) :0.60 Ω (Max) @VG=10V.
100% Avalanche Tested 1.Gate (G) 2.Drain (D) 3.Source (S) Absolute Maximum Ratings (Ta=25℃ unless otherwise noted) Symbol VDSS ID VGS(TH) EAS IAR PD Tj Tstg TL Parameter Drain-Source Voltage Drain Current Gate Threshold Voltage Tj=25℃ Tj=100℃.

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Published: Mar 30, 2025 |