SEMIX302GB126HDS Datasheet - Semikron International

SEMIX302GB126HDS IGBT

SEMiX302GB126HDs Absolute Maximum Ratings Symbol IGBT VCES IC ICnom ICRM ICRM = 2xICnom VCC = 600 V VGE ≤ 20 V Tj = 125 °C VCES ≤ 1200 V VGES tpsc Tj = 150 °C Tc = 25 °C Tc = 80 °C 1200 311 218 200 400 -20 20 10 -40 150 Tc = 25 °C Tc = 80 °C 292 202 200 IFRM = 2xIFnom tp = 10 ms, sin 180°, Tj = 25 °C 400 1300 -40 150 600 -40 125 AC sinus 50Hz, t = 1 min 4000 V A A A A V µs °C A A A A A °C A °C V Conditions Values Unit SEMiX®2s Trench IGBT Modules SEMiX302GB126HDs Tj Inverse diode IF IFn.

SEMIX302GB126HDS Features

* Homogeneous Si

* Trench = Trenchgate technology

* VCE(sat) with positive temperature coefficient

* High short circuit capability

* UL recognised file no. E63532 Tj = 150 °C Typical Applications

* AC inverter drives

* UPS

* Electroni

SEMIX302GB126HDS Datasheet (383.52 KB)

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Datasheet Details

Part number:

SEMIX302GB126HDS

Manufacturer:

Semikron International

File Size:

383.52 KB

Description:

Igbt.

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